Usage: ../2layerlens Foc_len_factor (Nominal = 10.0) fwhmt(arcmin) t_global detector_diam.(cm) [IDtext] Lens_layers Opened LaueW050T100R60_G2E_GG10.out for writing! bands Z00 Mill00 tfct00 Z01 Mill01 tfct01 Z02 Mill02 tfct02 Z03 Mill03 tfct03 Z04 Mill04 tfct04 1 32 111 1.00 -1 111 1.00 -1 111 1.00 -1 111 1.00 -1 111 1.00 Zone 0 with 1 active bands In get_ZONES6: layer 0, zone: 1, band: 0, Z: 32, Miller: 111, thickness factor: 1.00 Found 1 1 1 radial bands in layer 0 bands Z00 Mill00 tfct00 Z01 Mill01 tfct01 Z02 Mill02 tfct02 Z03 Mill03 tfct03 Z04 Mill04 tfct04 1 32 220 1.00 -1 111 1.00 -1 111 1.00 -1 111 1.00 -1 111 1.00 Zone 0 with 1 active bands In get_ZONES6: layer 1, zone: 1, band: 0, Z: 32, Miller: 220, thickness factor: 1.00 Found 1 1 1 radial bands in layer 1 After initREFL zn 1 Z 32 numOpts 2 nOpt 0 REFL.Z 32 Miller 111 F_cell 109.4 d-spac 3.262 atoms_f 0.5 After initREFL zn 1 Z 32 numOpts 2 nOpt 1 REFL.Z 32 Miller 220 F_cell 190.3 d-spac 1.998 atoms_f 0.5 Lens diam for F = 100.0 m and Z = 32: out: 253.2 cm, in: 95.0 cm, Bragg angl: 0.363 0.136 650/900 keV: 602.6 435.2 p2level: After hexring: layer 0, Max ring 52 facets 8269 7957, valid facets (Z>=0): 2768, total good 2768 p2level: After hexring: layer 1, Max ring 52 facets 8269 7957, valid facets (Z>=0): 2770, total good 5538 In facet_order: input facets: 7957, valid facets (nOption >=0): 2767 Facets sorted 7957 2767 2767 2767, first: 0, (orig #: 486), r_min: 47.5, fx_min: 3484, i: 2767 Facets sorted 7957 2767 2767 2767, last: 3484, (orig #: -1), r_max: 126.6 In facet_order: input facets: 7957, valid facets (nOption >=0): 2769 Facets sorted 7957 2769 2769 2769, first: 0, (orig #: 432), r_min: 47.5, fx_min: 3553, i: 2769 Facets sorted 7957 2769 2769 2769, last: 3553, (orig #: -1), r_max: 126.6 Ordered 2767 2769 facets on the two crystal layers 2LA Opt: 0, Z: 32, Elem: , MillIndx: 111, d_space: 3.262027 (AA), Eedge: 300.0, dE: 6.89, FormFct: 109.43 2LA Opt: 1, Z: 32, Elem: , MillIndx: 220, d_space: 1.997557 (AA), Eedge: 489.9, dE: 11.26, FormFct: 190.29 Option: 0, Z: 32, Element: , Miller Index: 111, d_spacing: 3.262027 (AA), Eedge: 300.0, dE: 6.89, FormFact: 109.43 Option: 1, Z: 32, Element: , Miller Index: 220, d_spacing: 1.997557 (AA), Eedge: 489.9, dE: 11.26, FormFact: 190.29 Before populate-loop: LEN-values: 7957 7957 0, nbands: L0: 1 1 1 L1: 1 1 1 nOpt A0B0 A0B1 A0B2 A1B0 A1B1 A1B2 A2B0 A2B1 A2B2 A0B0 A0B1 A0B2 A1B0 A1B1 A1B2 A2B0 A2B1 A2B2 0 L0 929 0 0 926 0 0 912 0 0 L1 0 0 0 0 0 0 0 0 0 1 L0 0 0 0 0 0 0 0 0 0 L1 665 0 0 674 0 0 674 0 0 Az0 L0: 32 111 929 L1: 32 220 665 Az1 L0: 32 111 926 L1: 32 220 674 Az2 L0: 32 111 912 L1: 32 220 674 #crystals azim_index0 azim_index1 azim_index2 azim_index0 azim_index1 azim_index2 Option 0 layer0/1 2767 0 r_min/max L0 47.5 126.6 47.5 126.6 47.8 126.6 L1 200.0 0.0 200.0 0.0 200.0 0.0 Option 1 layer0/1 0 2013 r_min/max L0 200.0 0.0 200.0 0.0 200.0 0.0 L1 77.6 126.6 77.5 126.6 77.6 126.6 Begin layer 0 Begin layer 0, GG: 10.0 Layer0, open thk_G2E_L0.txt for write, set 7957 elements of 'thkarray' to zero, set GGOK to 1 Peak reflectivity for Ge 111 at 300 keV is 21.9 (%) at a crystal thickness of 8.1 (mm) Facets relative dimensions: facet radius: 1.00, hole radius: 0.20, facet separation: 2.125, facet separation2: 1.227 Overlap calculations: relative facet separation: 2.125, rel_sep2: 1.227 alpha: 0.910 radians, 1xoverlp2 0.852 rel.hexag 1.245 for unit circle (area = PI) Areas relevant for one crystal (cm2): Hexagon: 15.64, A_basic: 12.57, A_hole: 0.50, A_crys: 12.08, oneOvlap: 3.41 noOvlap: 1.84 Area fractions relevant for one crystal (%): A_basic: 80.334, A_hole: 3.213, A_crys: 77.198, oneOvlap: 21.783 noOvlap: 11.771 Areas (cm2): cryst: 12.08, central hole: 0.50, hexagon: 15.64 Peak reflectivity for Ge 111 at 350 keV is 19.7 (%) at a crystal thickness of 9.6 (mm) nl: 0, N_b: 0, ii: 6248, iseq: 2000, nOpt: 0, Z: 32, thick: 1.032, Mill: 111, mass: 66.6, Ngnu: 1059 0 0 0 0 0 Peak reflectivity for Ge 111 at 400 keV is 17.8 (%) at a crystal thickness of 11.3 (mm) Peak reflectivity for Ge 111 at 450 keV is 16.1 (%) at a crystal thickness of 12.8 (mm) Peak reflectivity for Ge 111 at 500 keV is 14.7 (%) at a crystal thickness of 14.4 (mm) Peak reflectivity for Ge 111 at 550 keV is 13.4 (%) at a crystal thickness of 15.8 (mm) Peak reflectivity for Ge 111 at 600 keV is 12.3 (%) at a crystal thickness of 17.3 (mm) Peak reflectivity for Ge 111 at 650 keV is 11.4 (%) at a crystal thickness of 18.6 (mm) Peak reflectivity for Ge 111 at 700 keV is 10.5 (%) at a crystal thickness of 20.0 (mm) Peak reflectivity for Ge 111 at 750 keV is 9.8 (%) at a crystal thickness of 21.3 (mm) Peak reflectivity for Ge 111 at 800 keV is 9.1 (%) at a crystal thickness of 22.5 (mm) Now completed layer0, ready to save crystal masses and write reference energies nOpt: 0, M cryst: 221.6 221.6 M tot 221.6 NNopt: 1 iaz 0, n_b 0 nOpt 0 iaz: 0, n_b: 0, nOpt: 0, Z: 32 Reference energy 300.0 keV, for Ge(111) t_fact: 1.00, Mass: 221.6 221.6 kg Now completed layer0, ready to write thk-file, GG: 10, GGOK: 1 Layer0, thk_G2E_L0.txt, wrote 7957 elements of 'thkarray', thk_sum: 3434.0 cm, nonzero: 2767 Completed layer 0 Begin layer 1 Begin layer 1, GG: 10.0 Layer1, open thk_G2E_L1.txt for write, set 7957 elements of 'thkarray' to zero, set GGOK to 1 Peak reflectivity for Ge 220 at 500 keV is 23.7 (%) at a crystal thickness of 10.2 (mm) Peak reflectivity for Ge 220 at 550 keV is 22.3 (%) at a crystal thickness of 11.5 (mm) 22000 mass_limit_sum derived so far from layer 0: 44.83 kg nl: 1, N_b: 0, ii: 5867, iseq: 22000, nOpt: 1, Z: 32, thick: 1.166, Mill: 220, mass: 75.3, Ngnu: 2767 680 0 0 0 0 Peak reflectivity for Ge 220 at 600 keV is 20.9 (%) at a crystal thickness of 12.7 (mm) Peak reflectivity for Ge 220 at 650 keV is 19.7 (%) at a crystal thickness of 14.0 (mm) Peak reflectivity for Ge 220 at 700 keV is 18.5 (%) at a crystal thickness of 15.2 (mm) 21000 mass_limit_sum derived so far from layer 0: 127.27 kg Peak reflectivity for Ge 220 at 750 keV is 17.5 (%) at a crystal thickness of 16.4 (mm) Peak reflectivity for Ge 220 at 800 keV is 16.6 (%) at a crystal thickness of 17.6 (mm) Now completed layer1, ready to save crystal masses and write reference energies nOpt: 0, M cryst: 221.6 221.6 M tot 221.6 NNopt: 1 nOpt: 1, M cryst: 169.4 169.4 M tot 391.1 NNopt: 2 iaz 0, n_b 0 nOpt 1 iaz: 0, n_b: 0, nOpt: 1, Z: 32 Reference energy 489.9 keV, for Ge(220) t_fact: 1.00, Mass: 169.4 391.1 kg Now completed layer1, ready to write thk-file, GG: 10, GGOK: 1 Layer1, thk_G2E_L1.txt, wrote 7957 elements of 'thkarray', thk_sum: 2625.2 cm, nonzero: 2013 Completed layer 1 19873 mass_limit_sum derived so far from layer 0: 159.92 kg Jul 19 08:34:32 2021 Focal len: 100 m, Mos wdth: 30 arcs, Det. diam: 6.0 cm, T_glob: 1.00, NBands: 1 1 1 1 1 1 Ngnu: 2767 2013 0 0 0 0 Integrated reflectivity, Options 0-5: 61151.7 64107.1 0.0 0.0 0.0 0.0, total: 125258.8 (keVcm2) Integral Areas: No overlap: 17346.5 cm2, One overlap: 20159.1, Lens area: 43283.0, No of crystals: 2767 2013, crystal positions: 2767 4780 Average single layer reflectivity and transmission factors: Opt: 0, 32 111 5534 0.171 0.553 949 3063 Opt: 1, 32 220 4026 0.209 0.597 840 2403 Moment printout Layer: Azim: Number of crystals: 4780 18 weight: 391.0 47.8 kg, Moment: 13654.5 kgcm Mean radius: 34.9 Layer 0, 400 keV results, Mini/Peak reflectivity: 17.8 17.8 % Reflc.distr: 0 142 179 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 S 321 Layer 0, 400 keV results, Mini/Peak Gaussfactor : 0.1 100.0 % Gauss.distr: 91 29 17 16 16 9 9 7 9 8 11 5 8 5 9 8 6 9 17 32 0 S 321 mean 0.315 Layer 0, 400 keV results, Mini/Peak DetectOverlp: 5.1 99.9 % Ovlap.distr: 0 14 10 9 9 17 8 16 15 12 18 9 14 11 16 9 9 14 15 96 0 S 321 Layer 0, 700 keV results, Mini/Peak reflectivity: 10.5 10.5 % Reflc.distr: 0 0 172 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 S 172 Layer 0, 700 keV results, Mini/Peak Gaussfactor : 0.3 100.0 % Gauss.distr: 41 13 17 9 4 7 2 7 3 8 3 6 4 3 4 3 4 6 10 18 0 S 172 mean 0.314 Layer 0, 700 keV results, Mini/Peak DetectOverlp: 11.4 99.9 % Ovlap.distr: 0 0 4 4 9 6 9 5 6 5 13 10 8 4 5 5 8 10 6 55 0 S 172 Layer 1, 700 keV results, Mini/Peak reflectivity: 18.5 18.5 % Reflc.distr: 0 0 284 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 S 284 Layer 1, 700 keV results, Mini/Peak Gaussfactor : 0.3 100.0 % Gauss.distr: 69 23 16 18 12 15 8 6 8 8 5 12 7 6 6 7 8 8 12 30 0 S 284 mean 0.327 Layer 1, 700 keV results, Mini/Peak DetectOverlp: 11.1 99.9 % Ovlap.distr: 0 0 9 8 8 12 14 11 13 9 14 10 15 13 15 10 9 12 14 88 0 S 284